Field effect transistor, bipolar, MOSFET, IGBT

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ElectronicsClub

Published on Aug 4, 2021
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The distinctive features of molecular MOSFETs and bipolar transistors, as well as IGBTs, are considered. To control a field-effect transistor, a voltage must be applied to the gate relative to the source. Since the gate and source areas of a field-effect transistor are separated by a dielectric, it practically does not consume current. By analogy with a capacitor, current flows only when the gate is charged. Bipolar transistors require current in the circuit between the base and emitter. Therefore, such semiconductor devices are called current-type. In the high-voltage range, it is rational to use IGBTs. They are characterized by low control power and low resistance between the collector and the base in the open state of the transistor. Therefore, these semiconductor devices are widely used as keys of power converters, for example, on electric rolling stock of mainline railways. #transistor #MOSFET #electronicsclub

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